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Silicon solar cells and manufacturing

31 articles

Aluminum back surface field

An aluminum back surface field (Al-BSF) is a heavily aluminum-doped layer formed on the rear of a p-type silicon solar cell to suppress electron recombination at the metal contact.

Back surface field

The back surface field (BSF) is a heavily doped region at the rear of a silicon solar cell that repels minority carriers and reduces recombination losses.

Back-contact solar cell

A back-contact solar cell is a crystalline silicon solar cell with both contacts on the rear, eliminating front gridline shading; it holds the silicon efficiency record at 27.8%.

Bifacial solar cell

A bifacial solar cell is a photovoltaic cell that captures light on both its front and rear faces, credited to Antonio Luque, who patented a practical design in 1976.

Busbar-free metallization

Busbar-free metallization is a crystalline silicon solar cell design that eliminates printed silver busbars, instead collecting current with many thin wires bonded during lamination, cutting silver use and shading.

Diamond wire sawing

Diamond wire sawing is a wafer-slicing process in which steel wire coated with fixed diamond abrasive cuts hard, brittle materials such as silicon, silicon carbide, and sapphire into wafers.

Emitter wrap through solar cell

The emitter wrap through (EWT) solar cell is a crystalline silicon back-contact cell whose emitter connects to rear contacts through laser-drilled vias, first published by Sandia researchers in 1993.

G12 (solar wafer)

G12 is a standard monocrystalline silicon solar wafer measuring 210 mm × 210 mm, the largest square format in mainstream photovoltaic manufacturing, introduced by Zhonghuan Semiconductor in 2019.

Half-cut cell

A half-cut cell, also called a half-cell, is a silicon solar cell cut in half by laser, halving its current to cut resistive losses and improve shade tolerance.

Hemlock Semiconductor Operations

Hemlock Semiconductor Operations (HSC) is an American producer of hyper-pure polysilicon based in Hemlock, Michigan, founded in 1979 and supplying the semiconductor and solar energy industries.

Heterojunction solar cell

A heterojunction solar cell, also called silicon heterojunction (SHJ) or HIT, is a crystalline silicon wafer solar cell passivated by thin amorphous silicon layers, reaching record efficiencies above 26%.

HPBC

HPBC is a high-efficiency back-contact solar cell technology developed by the Chinese manufacturer LONGi, entering mass production in 2022 in the Hi-MO 6 module series.

Interdigitated back contact solar cell

An interdigitated back contact (IBC) solar cell is a crystalline silicon photovoltaic cell with both metal contacts interlocked on the rear surface, eliminating front-side shading and reaching efficiencies above 25%.

Laser doping

Laser doping is a semiconductor fabrication technique in which a pulsed laser locally melts silicon so dopants diffuse in, chiefly forming selective emitters under metal contacts in solar cells.

Light and elevated temperature-induced degradation

Light and elevated temperature-induced degradation (LeTID) is a defect mechanism in crystalline silicon solar cells that lowers carrier lifetime and power output over months to years.

Low-temperature silver paste

A low-temperature silver paste is a screen-printable conductive ink cured near 200 °C, used for metallizing silicon heterojunction solar cells whose amorphous layers tolerate little heat.

Mono-like silicon

Mono-like silicon, also called cast-mono or quasi-mono silicon, is photovoltaic silicon grown by directional solidification on monocrystalline seeds, combining mono-like efficiency with cheap multicrystalline casting.

Monocrystalline silicon

Monocrystalline silicon, also known as mono-Si or c-Si, is silicon in the form of a single continuous crystal lattice, used as the absorbing semiconductor in most solar cells and grown mainly by the Czochralski process.

N-type silicon solar cell

An n-type silicon solar cell is a solar cell doped with phosphorus so electrons carry the current, free of the boron-oxygen degradation that affects p-type cells.

Passivating contact

A passivating contact, sometimes called a passivating junction, is a contact in a silicon solar cell that suppresses carrier recombination and transports only one carrier type to the electrode.

PERC (solar cell)

PERC, or Passivated Emitter and Rear Cell, is a silicon solar cell architecture invented by Martin Green's team at UNSW in 1983, dominant from 2018 until TOPCon displaced it from 2025.

Screen-printed silicon solar cell

A screen-printed silicon solar cell is a crystalline silicon photovoltaic cell whose silver and aluminum contacts are applied by printing metal paste through a screen mesh and firing it.

Selective emitter solar cell

A selective emitter solar cell is a crystalline silicon solar cell whose front emitter is doped non-uniformly: heavily under the metal contacts and lightly between them, improving efficiency.

Siemens process

The Siemens process is a chemical vapor deposition method for producing hyperpure polysilicon, developed by Siemens in the mid-1950s and still holding about 85 percent of the polysilicon market in 2025.

Silicon dendritic web and ribbon growth

Silicon dendritic web and ribbon growth are crystal growth methods that pull a thin self-supporting silicon sheet directly from the melt, chiefly to make solar cell wafers without sawing.

Silicon heterojunction solar cell

A silicon heterojunction (SHJ), or HJT, solar cell is a crystalline-silicon cell whose junctions are thin amorphous-silicon films; Kaneka's 26.7% IBC cell set a record certified in 2017.

Silver paste

Silver paste is a screen-printable ink of silver particles, glass frit, and binders that forms the electrical contacts of crystalline silicon solar cells, the dominant metallization method in photovoltaic manufacturing.

Singlet fission sensitization of silicon solar cells

Singlet fission sensitization of silicon solar cells places an organic layer that splits one photon's energy into two excitons on silicon, potentially raising its efficiency limit from 29.4% to 34.6%.

Tunnel oxide passivated contact

Tunnel oxide passivated contact (TOPCon) is a carrier-selective contact for crystalline silicon solar cells, made of an ultrathin silicon oxide layer covered by doped poly-Si.

Upgraded metallurgical-grade silicon

Upgraded metallurgical-grade silicon (UMG-Si) is silicon purified from metallurgical-grade silicon to solar grade using metallurgical methods instead of the chemical Siemens process, for solar cells.