Technology and the built world

Gamepad

A gamepad is a game controller held with both hands, combining a D-pad, buttons, analog thumbsticks, and triggers, with haptic actuators for vibration feedback; many add rear paddles.

Gameunsa

Gameunsa (감은사) was a Unified Silla Buddhist temple on the coast of Gyeongju, South Korea, begun by King Munmu and completed by his son Sinmun in 682.

Gamma (app)

Gamma is a web-based AI platform, founded in 2020 by three former Optimizely employees, that generates presentations, documents, and webpages from prompts or pasted files.

GAMMA 10 (tandem mirror)

GAMMA 10 is a tandem mirror plasma confinement device at the University of Tsukuba, Japan, the world's largest, operating since 1983 for controlled nuclear fusion research.

Gamma camera (γ-camera)

The gamma camera, also called the Anger camera, is an imaging device that detects gamma rays from radioactive tracers inside the body; Hal Anger invented it in 1957.

Gamma correction

Gamma correction, also called the gamma curve, applies a nonlinear power-law transfer function between linear light intensity and encoded pixel values so that display decoding cancels the encoding.

Gamma ferric oxide

Gamma ferric oxide, also called maghemite, is a magnetic iron oxide that coated nearly all analog audio and video tape from the late 1940s until the early 1970s.

Gamma prime

Gamma prime (γ′) is the ordered intermetallic precipitate, based on Ni₃(Al, Ti), that is the principal strengthening phase in nickel-based superalloys for jet-engine turbine disks and blades.

Gamma titanium aluminide

Gamma titanium aluminide (γ-TiAl) is a lightweight intermetallic alloy with a density of about 4 g/cm³ that retains strength at 650–850 °C, used in jet engine turbine blades.

Gamma-ray detector

A gamma-ray detector is an instrument that measures the presence, intensity, and energy of gamma-ray photons, typically above 100 keV, by converting deposited energy into an electrical signal.

A GaN lateral HEMT is a power or radio-frequency transistor in which current flows horizontally through a two-dimensional electron gas formed at an AlGaN/GaN interface, distinguishing it from vertical GaN devices.

GaN power integrated circuit

A GaN power integrated circuit is a gallium nitride chip combining power transistors with drive or protection circuitry on one die, used in fast chargers and data-center power.

GaN power transistor

A GaN power transistor is a power semiconductor switch built on gallium nitride, whose wide 3.4 eV bandgap gives high breakdown field and fast, efficient switching.

GaN RF front-end modules

A GaN RF front-end module is a radio-frequency front-end module using gallium nitride transistors, typically in its power amplifier, for high-power uses like 5G base stations and radar.

GaN vertical p-n diode

A GaN vertical p-n diode is a gallium nitride power rectifier in which current flows vertically through a p-n junction, blocking high reverse voltages in a small die.

GaN vertical trench MOSFETs

A GaN vertical trench MOSFET is a gallium nitride power transistor carrying current vertically, with a gate buried in an etched trench, targeting voltages above 1000 V.

GaN-on-diamond HEMT

A GaN-on-diamond HEMT is a gallium nitride high-electron-mobility transistor built on diamond instead of silicon or silicon carbide, so heat leaves the channel far faster.

GaN-on-diamond thermal management for RF amplifiers

GaN-on-diamond thermal management places diamond, the best bulk thermal conductor, as the substrate of GaN RF power amplifiers to pull heat from the transistor channel.

GaN-on-Si HEMT

A GaN-on-Si HEMT is a high-electron-mobility transistor in which gallium nitride is grown on a silicon substrate, combining GaN's wide-bandgap performance with silicon's low cost, and serving RF power amplification and power switching.

GaN-on-Si power HEMTs

GaN-on-Si power HEMTs are power transistors built by growing gallium nitride on inexpensive silicon wafers, giving fast, efficient switching for fast chargers, data centers, and automotive powertrains.

GaN-on-Si RF power amplifier

A GaN-on-Si RF power amplifier is a radio-frequency power amplifier made from gallium nitride transistors grown on silicon, combining GaN performance with low-cost, large-wafer silicon manufacturing for 5G.

GaN-on-silicon

GaN-on-silicon (GaN-on-Si) is a semiconductor manufacturing technology in which gallium nitride is grown on silicon substrates, chiefly for lateral HEMT power and radio-frequency devices in standard CMOS fabs.

Gander International Airport

Gander International Airport, also known as Gander Airport, is an international airport in Gander, Newfoundland and Labrador, built in the late 1930s as a refueling stop for transatlantic flights.

Gandhinagar Thermal Power Station

Gandhinagar Thermal Power Station (GTPS) is a coal-fired power plant in Gandhinagar, Gujarat, India, owned and operated by Gujarat State Electricity Corporation Ltd. with an installed capacity of 630 MW.

Ganesh Kailasam

Ganesh Kailasam is a chemical engineer and technology executive elected to the National Academy of Engineering in 2013 for developing high-performance polymer processes, later VP of Technology at OGCI Climate Investments.

GANEX process

The GANEX process (Grouped ActiNide Extraction) is a two-cycle solvent extraction method for reprocessing spent nuclear fuel, proposed by France's CEA in 2005, that recovers uranium, plutonium, and minor actinides together rather than separating pure plutonium.