All articles starting with F
15,892 articles
Ferrocene
Ferrocene (C10H10Fe), also known as dicyclopentadienyl iron, is a stable organometallic compound with a sandwich structure, first synthesized in 1951 and now used as an electrochemical reference, in catalysis, and in drug design.
Ferrochelatase
Ferrochelatase (heme synthetase, EC 4.99.1.1, FECH gene) is the terminal mitochondrial enzyme of heme biosynthesis, inserting ferrous iron into protoporphyrin IX; deficiency causes erythropoietic protoporphyria.
Ferroelasticity
Ferroelasticity is a crystal property in which two or more orientation states, differing in spontaneous strain, can be switched by applied stress, the mechanical analog of ferroelectricity.
Ferroelectric AlScN
Ferroelectric AlScN (aluminum scandium nitride, Al1-xScxN) is a wurtzite-structure nitride in which scandium alloying enables switchable polarization, first demonstrated in 2019 and now a leading candidate for non-volatile memory.
Ferroelectric AlScN thin films
Ferroelectric AlScN thin films are wurtzite aluminum scandium nitride alloys, Al₁₋ₓScₓN, whose polarization switches under an electric field; demonstrated in 2019, they are studied for CMOS-compatible ferroelectric memory.
Ferroelectric domain
A ferroelectric domain is a region of a ferroelectric crystal with uniform spontaneous polarization, bounded by thin domain walls; domain structure governs devices like capacitors and memories.
Ferroelectric domain wall
A ferroelectric domain wall is the nanoscale interface between adjacent domains of uniform polarization in a ferroelectric, often conductive in insulating crystals and used in low-energy electronics.
Ferroelectric field-effect transistor
A ferroelectric field-effect transistor (FeFET) is a field-effect transistor whose ferroelectric gate layer stores data as polarization direction, proposed in 1963 and pursued as non-volatile memory and neuromorphic hardware.
Ferroelectric liquid crystal
A ferroelectric liquid crystal is a fluid liquid-crystal phase with switchable spontaneous polarization, known in the chiral smectic C (SmC) form and used in fast displays.
Ferroelectric material
A ferroelectric material holds a spontaneous electric polarization that an applied electric field can switch between stable states, below the Curie temperature, above which it becomes paraelectric.
Ferroelectric Memory Company (company)
Ferroelectric Memory Company, also known as FMC, is a German fabless semiconductor startup founded in Dresden in 2016 that develops hafnium-oxide memory, announcing a €100 million financing round in November 2025.
Ferroelectric memristor
A ferroelectric memristor is a two-terminal electronic device whose resistance is set by the polarization of a ferroelectric layer, giving non-volatile, continuously tunable memory for artificial synapses and edge computing.
Ferroelectric nematic phase
A ferroelectric nematic liquid crystal (N_F) is a liquid-crystalline material whose nematic phase carries a spontaneous electric polarization, first reported in 2017 in the mesogens RM734 and DIO.
Ferroelectric photovoltaic effect
The ferroelectric photovoltaic effect generates steady photocurrent and photovoltage in ferroelectric materials under illumination, without a p-n junction, and can produce voltages above the bandgap.
Ferroelectric polymer
A ferroelectric polymer is a crystalline or liquid-crystalline polymer whose spontaneous polarization reverses under an external electric field, notably PVDF, used in sensors, actuators, memory, and cooling.
Ferroelectric polymer memory
Ferroelectric polymer memory is non-volatile data storage that holds each bit as the polarization direction of a polymer film such as PVDF, enabling low-temperature fabrication on flexible substrates.
Ferroelectric quantum criticality
Ferroelectric quantum criticality is the behavior of insulating crystals whose ferroelectric transition temperature is tuned to absolute zero, so quantum fluctuations of the polarization govern the dielectric response.
Ferroelectric Rashba semiconductor
A ferroelectric Rashba semiconductor (FERSC) is a material whose Rashba spin splitting can be switched by an electric field, with ferroelectric GeTe as its prototype.
Ferroelectric semiconductor
A ferroelectric semiconductor is a material combining switchable non-volatile electric polarization and semiconducting charge transport in one layer, best studied in the two-dimensional material α-In₂Se₃.
Ferroelectric skyrmion
A ferroelectric skyrmion is a nanoscale, topologically protected swirl of electric polarization, predicted and realized in ferroelectric nanocomposites in 2015 and observed at room temperature in oxide superlattices.
Ferroelectric superlattice
A ferroelectric superlattice is an artificial crystalline heterostructure of alternating ultrathin ferroelectric and paraelectric perovskite layers, such as PbTiO₃/SrTiO₃, stacked with unit-cell control to tune polarization, dielectric response, and domain structure.
Ferroelectric tunnel junction
A ferroelectric tunnel junction is a two-terminal nanoelectronic device in which a nanometer-thick ferroelectric barrier switches between low- and high-resistance states, investigated for non-volatile memory and artificial synapses.
Ferroelectric vortex
A ferroelectric vortex is a nanoscale polar domain structure in a ferroelectric crystal whose electric dipoles rotate continuously around a core, first imaged in 2011 and proposed for high-density memory.
Ferroelectric vortices in PbTiO3/SrTiO3 superlattices
Ferroelectric vortices in PbTiO3/SrTiO3 superlattices are nanoscale patterns where electric polarization rotates continuously in alternating layers of lead titanate and strontium titanate, first observed in 2016.
Ferroelectric wurtzite nitrides
Ferroelectric wurtzite nitrides are polar wurtzite-structured semiconductor alloys, chiefly aluminum scandium nitride (AlScN), whose polarization reverses under an electric field; ferroelectricity in AlScN was demonstrated in 2019.
Ferroelectricity
Ferroelectricity, or the ferroelectric effect, is the property of certain dielectric materials with a spontaneous electric polarization that can be reversed by an external electric field, first observed in Rochelle salt in 1920.
Ferroelectricity in hafnium oxide
Ferroelectricity in hafnium oxide is the switchable spontaneous polarization observed in thin HfO₂ films, arising from a metastable polar orthorhombic phase and first reported in silicon-doped films in 2011, enabling CMOS-compatible ferroelectric memories.
Ferroelectricity in Hf0.5Zr0.5O2
Ferroelectricity in Hf0.5Zr0.5O2 (HZO, hafnium zirconium oxide) is the retained, switchable electric polarization shown by thin films of this oxide, widely studied for nonvolatile memory since 2011.
Ferroelectricity in SnTe
Ferroelectricity in SnTe (tin telluride) is the spontaneous, switchable electric polarization that arises when SnTe's cubic rock salt lattice distorts into a rhombohedral structure at low temperature.
Ferroelectricity in ultrathin Hf0.5Zr0.5O2
Ferroelectricity in ultrathin Hf0.5Zr0.5O2 (HZO) is the switchable spontaneous polarization kept by nanometer-thin films of the hafnium-zirconium oxide solid solution, promising for CMOS-compatible nonvolatile memory.